PART |
Description |
Maker |
IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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IDT71V416S10PHG IDT71V416S10PHGI IDT71V416S12PHG I |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 15 ns, PBGA48 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 10 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
IDT71T016SA15BFI IDT71T016SA10PH IDT71T016SA10PHI |
2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) 64K X 16 STANDARD SRAM, 10 ns, PDSO44 2.5V CMOS Static RAM 1 Meg (64K x 16-Bit) .5V的CMOS静态RAM 1梅格4K的x 16位) P-Channel NexFET Power MOSFET 6-SON -55 to 150 64K X 16 STANDARD SRAM, 12 ns, PBGA48
|
Integrated Device Technology, Inc.
|
IDT71V424 IDT71V424S12Y IDT71V424S15Y IDT71V424S20 |
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)
|
Integrated Device Technology
|
P3C1041-10JC P3C1041-10JI P3C1041-10TC P3C1041-10T |
HIGH SPEED 256K x 16 (4 MEG) STATIC CMOS RAM
|
Pyramid Semiconductor Corporation
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P3C1011-35TM P3C1011 P3C1011-10JC P3C1011-10JI P3C |
HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 20 ns, PDSO44 HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 35 ns, PDSO44 HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 10 ns, PDSO44 HIGH SPEED 128K x 16 (2 MEG) STATIC CMOS RAM 128K X 16 STANDARD SRAM, 25 ns, PDSO44
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Pyramid Semiconductor C... PYRAMID[Pyramid Semiconductor Corporation] Pyramid Semiconductor, Corp.
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IDT6168LA15PI IDT6168LA IDT6168SA 6168LA_DS_9916 I |
5.0V, 4k X 4, CMOS, Asynchronous, Static RAM From old datasheet system CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDIP20 CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 35 ns, PDSO20 CMOS STATIC RAM 16K (4K x 4-BIT) 4K X 4 STANDARD SRAM, 25 ns, CQCC20
|
Integrated Device Techn... IDT[Integrated Device Technology] Integrated Device Technology, Inc. INTEGRATED DEVICE TECHNOLOGY INC
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CAT59C11P CAT59C11PI CAT59C11K-TE13 CAT59C11K-TE7 |
256K x 4 Static RAM 2M x 8 Static RAM Microwire Serial EEPROM 16-Mbit (2M x 8) Static RAM 微型导线串行EEPROM 512K x 32 Static RAM
|
Atmel, Corp.
|
KM684000 KIM684000L-8L KIM684000-10 KIM684000-5 KI |
512Kx8 bit CMOS static RAM, 85ns, low power 512Kx8 bit CMOS static RAM, 100ns, low power 524/ 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM PT 16C 16#16 PIN PLUG 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM 52488字8位高速CMOS静态RAM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
M5M5W816TP-55HI M5M5W816TP-85HI M5M5W816TP-70HI |
Memory>Low Power SRAM (M5M5W816TP-55HI/70HI/85HI) CMOS STATIC RAM 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Semiconductor RENESAS[Renesas Electronics Corporation]
|
K6T1008C2C K6T1008C2C-RB55 K6T1008C2C-RB70 K6T1008 |
128K X 8 STANDARD SRAM, 70 ns, PDSO32 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功CMOS静态RAM 128K x8 bit Low Power CMOS Static RAM 128K的x8位低功耗CMOS静态RAM 55/70ns; V(cc): 4.5 to 5.5V; 128 x 8-bit low power CMOS static RAM 55ns; 128 x 8-bit low power CMOS static RAM 70ns; 128 x 8-bit low power CMOS static RAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Electronic
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